dated : 14/ 01/2008 semtech electronics ltd. ( subsidiary of sino-tech internatio nal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) ? MMDT1N434 npn silicon epitaxial planar transistor for switching and interface circuit and drive circuit applications features ? with built-in bias resistors ? simplify circuit design ? reduce a quantity of parts and manufacturing process absolute maximum ratings (t a = 25 o c) parameter symbol value unit collector base voltage v cbo 50 v collector emitter voltage v ceo 50 v emitter base voltage v ebo 6 v collector current i c 100 ma power dissipation p tot 200 mw junction temperature t j 150 o c storage temperature range t s - 55 to + 150 o c characteristics at t a = 25 o c parameter symbol min. typ. max. unit dc current gain at v ce = 5 v, i c = 5 ma h fe 50 - - - collector base cutoff current at v cb = 50 v i cbo - - 0.1 a collector emitter breakdown voltage at i c = 100 a v (br)ceo 50 - - v collector emitter saturation voltage at i c = 10 ma, i b = 0.5 ma v ce(sat) - - 0.3 v input on voltage at v ce = 0.2 v, i c = 5 ma v i(on) - - 1.7 v input off voltage at v ce = 5 v, i c = 100 a v i(off) 0.5 - - v input resistor r 1 3.29 4.7 6.11 k ? input resistor r 2 15.4 22 28.6 k ? resistance ratio r 2 / r 1 3.6 4.5 5.5 - transition frequency at v ce = 10 v, -i e = 5 ma, f = 100 mhz f t - 250 - mhz sot-23 plastic package base (input) emitter (common) r2 r1 collector (output)
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